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1.
Nano Lett ; 23(14): 6720-6726, 2023 Jul 26.
Artigo em Inglês | MEDLINE | ID: mdl-37450893

RESUMO

Mutual synchronization of N serially connected spintronic nano-oscillators boosts their coherence by N and peak power by N2. Increasing the number of synchronized nano-oscillators in chains holds significance for improved signal quality and emerging applications such as oscillator based unconventional computing. We successfully fabricate spin Hall nano-oscillator chains with up to 50 serially connected nanoconstrictions using W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks. Our experiments demonstrate robust and complete mutual synchronization of 21 nanoconstrictions at an operating frequency of 10 GHz, achieving line widths <134 kHz and quality factors >79,000. As the number of mutually synchronized oscillators increases, we observe a quadratic increase in peak power, resulting in 400-fold higher peak power in long chains compared to individual nanoconstrictions. While chains longer than 21 nanoconstrictions also achieve complete mutual synchronization, it is less robust, and their signal quality does not improve significantly, as they tend to break into partially synchronized states.

2.
Nanoscale ; 14(4): 1432-1439, 2022 Jan 27.
Artigo em Inglês | MEDLINE | ID: mdl-35018936

RESUMO

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative tone resist. For the nanoscopic voltage gates, we utilize a two-step tilted ion beam etching approach and through-hole encapsulation using 30 nm HfOx. The optimized tilted etching process reduces sidewalls by 75% compared to no tilting. Moreover, the HfOx encapsulation avoids any sidewall shunting and improves gate breakdown. Our experimental results on W/CoFeB/MgO/SiO2 SHNOs show significant frequency tunability (6 MHz V-1) even for moderate perpendicular magnetic anisotropy. Circular patterns with diameter of 45 nm are achieved with an aspect ratio better than 0.85 for 80% of the population. The optimized fabrication process allows incorporating a large number of individual gates to interface to SHNO arrays for unconventional computing and densely packed spintronic neural networks.

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